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IXFR 180N10
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
ISOPLUS 247 (IXFR) OUTLINE
g fs
V DS = 10 V; I D = 90A
Note 2
60
90
S
C iss
9400
pF
C oss
C rss
t d(on)
t r
t d(off)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 90A
R G = 1 W (External),
3200
1660
50
90
140
pF
pF
ns
ns
ns
t f
65
ns
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Q g(on)
400
nC
Q gs
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 90A
65
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A 1
Q gd
220
nC
A 4.83 5.21
2.29 2.54
.190 .205
.090 .100
A 2
b 1
R thJC
R thCK
0.15
0.30
K/W
K/W
1.91 2.16
b 1.14 1.40
1.91 2.13
.075 .085
.045 .055
.075 .084
b 2
2.92 3.12
.115 .123
C 0.61 0.80
D 20.80 21.34
.024 .031
.819 .840
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
.620 .635
.215 BSC
.780 .800
Symbol
Test Conditions
min.
typ.
max.
L1 3.81 4.32
.150 .170
Q 5.59 6.20
.220 .244
I S
I SM
V SD
V GS = 0 V
Repetitive;
pulse width limited by T JM
I F = 100A, V GS = 0 V, Note 1
180
720
1.5
A
A
V
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
.170 .190
.520 .540
.620 .640
.065 .080
t rr
250
ns
Q RM
I RM
I F = 50A,-di/dt = 100 A/ m s, V R = 100 V
1.1
13
m C
A
Note: 1. Pulse width limited by T JM
2. Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
? 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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